型号:

STD8N65M5

RoHS:无铅 / 符合
制造商:STMicroelectronics描述:MOSFET N-CH 650V 7A DPAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
STD8N65M5 PDF
其它有关文件 STD8N65M5 View All Specifications
产品培训模块 5th Generation High Voltage Mosfet Technology
标准包装 1
系列 MDmesh™
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 650V
电流 - 连续漏极(Id) @ 25° C 7A
开态Rds(最大)@ Id, Vgs @ 25° C 600 毫欧 @ 3.5A,10V
Id 时的 Vgs(th)(最大) 5V @ 250µA
闸电荷(Qg) @ Vgs 15nC @ 10V
输入电容 (Ciss) @ Vds 690pF @ 100V
功率 - 最大 70W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 D-Pak
包装 标准包装
其它名称 497-10878-6
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